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PMN28UN,165

Manufacturer: NXP USA Inc.
REK ID: 136532

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 12V 
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 700mV @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.75W (Tc) 
Rds On (Max) @ Id, Vgs 34 mOhm @ 2A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-TSOP 
Package / Case SC-74, SOT-457 

Description

MOSFET N-CH 12V 5.7A 6TSOP - N-Channel 12V 5.7A (Tc) 1.75W (Tc) Surface Mount 6-TSOP

Transistors PMN28UN,165

Datasheet PMN28UN,165 (PDF)

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Available: 7 psc.
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PMN28UN,165
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