| Manufacturer | Nexperia USA Inc. |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.4nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 6V |
| FET Feature | - |
| Power Dissipation (Max) | 12.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 3A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WLCSP (1.48x.98) |
| Package / Case | 6-XFBGA, WLCSP |
MOSFET N-CH 12V 8.4A 6WLCSP - N-Channel 12V 8.4A (Ta) 12.5W (Tc) Surface Mount 6-WLCSP (1.48x.98)
Transistors PMCM650VNE/S500Z
The manager will inform you of the total cost including delivery.