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PHX9NQ20T,127

Manufacturer: NXP USA Inc.
REK ID: 136597

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 200V 
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 959pF @ 25V 
FET Feature 
Power Dissipation (Max) 25W (Tc) 
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220-3 
Package / Case TO-220-3 Full Pack, Isolated Tab 

Description

MOSFET N-CH 200V 5.2A TO220F - N-Channel 200V 5.2A (Tc) 25W (Tc) Through Hole TO-220-3

Transistors PHX9NQ20T,127

Datasheet PHX9NQ20T,127 (PDF)

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PHX9NQ20T,127
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