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PHU77NQ03T,127

Manufacturer: NXP USA Inc.
REK ID: 136609

Technical Information

Manufacturer NXP USA Inc. 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 25V 
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 17.1nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V 
FET Feature 
Power Dissipation (Max) 107W (Tc) 
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package I-Pak 
Package / Case TO-251-3 Short Leads, IPak, TO-251AA 

Description

MOSFET N-CH 25V 75A I-PAK - N-Channel 25V 75A (Tc) 107W (Tc) Through Hole I-Pak

Transistors PHU77NQ03T,127

Datasheet PHU77NQ03T,127 (PDF)

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Available: 10 psc.
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PHU77NQ03T,127
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