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PHT6N06LT,135

Manufacturer: NXP USA Inc.
REK ID: 132916

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 55V 
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 5V 
Vgs(th) (Max) @ Id 2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V 
Vgs (Max) ±13V 
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) 
Rds On (Max) @ Id, Vgs 150 mOhm @ 5A, 5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-223 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 55V 2.5A SOT223 - N-Channel 55V 2.5A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223

Transistors PHT6N06LT,135

Datasheet PHT6N06LT,135 (PDF)

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Available: 15 psc.
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PHT6N06LT,135
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