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PHK4NQ10T,518

Manufacturer: NXP USA Inc.
REK ID: 136484

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta) 
Rds On (Max) @ Id, Vgs 70 mOhm @ 4A, 10V 
Operating Temperature -65°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 100V SOT96-1 - N-Channel 100V 2.5W (Ta) Surface Mount 8-SO

Transistors PHK4NQ10T,518

Datasheet PHK4NQ10T,518 (PDF)

Price (check the terms and price with the managers)
Available: 13 psc.
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PHK4NQ10T,518
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