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PHD37N06LT,118

Manufacturer: NXP USA Inc.
REK ID: 136579

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 55V 
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 
Vgs(th) (Max) @ Id 2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 5V 
Vgs (Max) ±13V 
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V 
FET Feature 
Power Dissipation (Max) 100W (Tc) 
Rds On (Max) @ Id, Vgs 32 mOhm @ 17A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package DPAK 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 55V 37A DPAK - N-Channel 55V 37A (Tc) 100W (Tc) Surface Mount DPAK

Transistors PHD37N06LT,118

Datasheet PHD37N06LT,118 (PDF)

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Available: 16 psc.
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PHD37N06LT,118
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