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PHD18NQ10T,118

Manufacturer: NXP USA Inc.
REK ID: 136624

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V 
FET Feature 
Power Dissipation (Max) 79W (Tc) 
Rds On (Max) @ Id, Vgs 90 mOhm @ 9A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package DPAK 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 100V 18A DPAK - N-Channel 100V 18A (Tc) 79W (Tc) Surface Mount DPAK

Transistors PHD18NQ10T,118

Datasheet PHD18NQ10T,118 (PDF)

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PHD18NQ10T,118
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