| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 5.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MOSFET N-CH 55V 10.3A D2PAK - N-Channel 55V 10.3A (Tc) 33W (Tc) Surface Mount D2PAK
Transistors PHB11N06LT,118
The manager will inform you of the total cost including delivery.