| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 76.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
MOSFET N-CH 30V 76.7A LFPAK - N-Channel 30V 76.7A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8
Transistors PH8030L,115
The manager will inform you of the total cost including delivery.