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PH1825AL,115

Manufacturer: NXP USA Inc.
REK ID: 136617

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 25V 
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.15V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 12V 
FET Feature 
Power Dissipation (Max) 104W (Tc) 
Rds On (Max) @ Id, Vgs 1.8 mOhm @ 25A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package LFPAK56, Power-SO8 
Package / Case SC-100, SOT-669 

Description

MOSFET N-CH 25V 100A LFPAK - N-Channel 25V 100A (Tc) 104W (Tc) Surface Mount LFPAK56, Power-SO8

Transistors PH1825AL,115

Datasheet PH1825AL,115 (PDF)

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PH1825AL,115
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