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PH16030L,115

Manufacturer: NXP USA Inc.
REK ID: 136565

Technical Information

Manufacturer NXP USA Inc. 
Series TrenchMOS™ 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V 
Vgs (Max) ±15V 
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 12V 
FET Feature 
Power Dissipation (Max) 41.6W (Tc) 
Rds On (Max) @ Id, Vgs 16.9 mOhm @ 15A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package LFPAK56, Power-SO8 
Package / Case SC-100, SOT-669 

Description

MOSFET N-CH 30V 38A LFPAK - N-Channel 30V 38A (Tc) 41.6W (Tc) Surface Mount LFPAK56, Power-SO8

Transistors PH16030L,115

Datasheet PH16030L,115 (PDF)

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Available: 13 psc.
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PH16030L,115
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