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NVD4809NT4G

Manufacturer: ON Semiconductor
REK ID: 135109

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 58A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 25nC @ 11.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 12V 
FET Feature 
Power Dissipation (Max) 1.4W (Ta), 52W (Tc) 
Rds On (Max) @ Id, Vgs 9 mOhm @ 30A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package DPAK 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 30V 58A DPAK - N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK

Transistors NVD4809NT4G

Datasheet NVD4809NT4G (PDF)

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NVD4809NT4G
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