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NVB5426NT4G

Manufacturer: ON Semiconductor
REK ID: 133512

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V 
FET Feature 
Power Dissipation (Max) 215W (Tc) 
Rds On (Max) @ Id, Vgs 6 mOhm @ 60A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package D2PAK 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 60V 120A D2PAK - N-Channel 60V 120A (Tc) 215W (Tc) Surface Mount D2PAK

Transistors NVB5426NT4G

Datasheet NVB5426NT4G (PDF)

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NVB5426NT4G
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