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NTP5863NG

Manufacturer: ON Semiconductor
REK ID: 133007

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 97A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V 
FET Feature 
Power Dissipation (Max) 150W (Tc) 
Rds On (Max) @ Id, Vgs 7.8 mOhm @ 20A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 60V 97A TO-220AB - N-Channel 60V 97A (Tc) 150W (Tc) Through Hole TO-220AB

Transistors NTP5863NG

Datasheet NTP5863NG (PDF)

Price (check the terms and price with the managers)
Available: 10 psc.
Price available upon request
NTP5863NG
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