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NTMKE4891NT1G

Manufacturer: ON Semiconductor
REK ID: 132018

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 25V 
Current - Continuous Drain (Id) @ 25°C 26.7A (Ta), 151A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 15V 
FET Feature 
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 29A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 4-ICEPAK - E1 PAD (6.3x4.9) 
Package / Case 5-ICEPAK 

Description

MOSFET N-CH 25V 129A ICEPAK - N-Channel 25V 26.7A (Ta), 151A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount 4-ICEPAK - E1 PAD (6.3x4.9)

Transistors NTMKE4891NT1G

Datasheet NTMKE4891NT1G (PDF)

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