| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7350pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 176W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 45A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262-3 |
| Package / Case | TO-262-3 Full Pack, I²Pak |
MOSFET N-CH 55V 90A TO-220 - N-Channel 55V 90A (Tc) 1.8W (Ta), 176W (Tc) Through Hole TO-262-3
Transistors NP90N055NUK-S18-AY
The manager will inform you of the total cost including delivery.