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NP89N055MUK-S18-AY

Manufacturer: Renesas Electronics America
REK ID: 134357

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tube  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 55V 
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 147W (Tc) 
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 45A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220-3 
Package / Case TO-220-3 

Description

MOSFET N-CH 55V 90A TO-220 - N-Channel 55V 90A (Tc) 1.8W (Ta), 147W (Tc) Through Hole TO-220-3

Transistors NP89N055MUK-S18-AY

Datasheet NP89N055MUK-S18-AY (PDF)

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NP89N055MUK-S18-AY
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