| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 128nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 40A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
MOSFET N-CH 60V 80A TO-220 - N-Channel 60V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-220-3
Transistors NP80N06MLG-S18-AY
The manager will inform you of the total cost including delivery.