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NP50P03YDG-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133158

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V 
FET Feature 
Power Dissipation (Max) 1W (Ta), 102W (Tc) 
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 25A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-HSON 
Package / Case 8-SMD, Flat Lead Exposed Pad 

Description

MOSFET P-CH 30V 50A 8HSON - P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON

Transistors NP50P03YDG-E1-AY

Datasheet NP50P03YDG-E1-AY (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
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