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NP36P06KDG-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133156

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 56W (Tc) 
Rds On (Max) @ Id, Vgs 29.5 mOhm @ 18A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-263 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET P-CH 60V 36A TO-263 - P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263

Transistors NP36P06KDG-E1-AY

Datasheet NP36P06KDG-E1-AY (PDF)

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Available: 8 psc.
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NP36P06KDG-E1-AY
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