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NP35N04YUG-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133150

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V 
FET Feature 
Power Dissipation (Max) 1W (Ta), 77W (Tc) 
Rds On (Max) @ Id, Vgs 10 mOhm @ 17.5A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-HSON 
Package / Case 8-SMD, Flat Lead Exposed Pad 

Description

MOSFET N-CH 40V 35A 8HSON - N-Channel 40V 35A (Tc) 1W (Ta), 77W (Tc) Surface Mount 8-HSON

Transistors NP35N04YUG-E1-AY

Datasheet NP35N04YUG-E1-AY (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
Price available upon request
NP35N04YUG-E1-AY
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