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NP22N055SHE-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133053

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 55V 
Current - Continuous Drain (Id) @ 25°C 22A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.2W (Ta), 45W (Tc) 
Rds On (Max) @ Id, Vgs 39 mOhm @ 11A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252 (MP-3ZK) 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 55V 22A TO-252 - N-Channel 55V 22A (Ta) 1.2W (Ta), 45W (Tc) Surface Mount TO-252 (MP-3ZK)

Transistors NP22N055SHE-E1-AY

Datasheet NP22N055SHE-E1-AY (PDF)

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Available: 17 psc.
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NP22N055SHE-E1-AY
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