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NP180N055TUJ-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133146

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 55V 
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 14250pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 348W (Tc) 
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 90A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-263-7 
Package / Case TO-263-7, D²Pak (6 Leads + Tab) 

Description

MOSFET N-CH 55V 180A TO-263-7 - N-Channel 55V 180A (Tc) 1.8W (Ta), 348W (Tc) Surface Mount TO-263-7

Transistors NP180N055TUJ-E1-AY

Datasheet NP180N055TUJ-E1-AY (PDF)

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NP180N055TUJ-E1-AY
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