Manufacturer | Renesas Electronics America |
Series | - |
Packaging | Cut Tape (CT) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10350pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 250W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263-7 |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
MOSFET N-CH 55V 160A TO-263-7 - N-Channel 55V 160A (Tc) 1.8W (Ta), 250W (Tc) Surface Mount TO-263-7
Transistors NP160N055TUJ-E1-AY
The manager will inform you of the total cost including delivery.