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NP160N04TDG-E1-AY

Manufacturer: Renesas Electronics America
REK ID: 133046

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 160A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 15750pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 220W (Tc) 
Rds On (Max) @ Id, Vgs 2 mOhm @ 80A, 10V 
Operating Temperature 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-263-7 
Package / Case TO-263-7, D²Pak (6 Leads + Tab) 

Description

MOSFET N-CH 40V 160A TO-263 - N-Channel 40V 160A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-7

Transistors NP160N04TDG-E1-AY

Datasheet NP160N04TDG-E1-AY (PDF)

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