| Manufacturer | Renesas Electronics America |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10350pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 220W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 55A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MOSFET N-CH 55V MP-25ZP/TO-263 - N-Channel 55V 110A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263
Transistors NP109N055PUJ-E1B-AY
The manager will inform you of the total cost including delivery.