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NGTG35N65FL2WG

Manufacturer: ON Semiconductor
REK ID: 80699
3.37 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Field Stop 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 70A 
Current - Collector Pulsed (Icm) 120A 
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A 
Power - Max 300W 
Switching Energy 840µJ (on), 280µJ (off) 
Input Type Standard 
Gate Charge 125nC 
Td (on/off) @ 25°C 72ns/132ns 
Test Condition 400V, 35A, 10 Ohm, 15V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247-3 

Description

IGBT 650V 60A 167W TO247 - IGBT Field Stop 650V 70A 300W Through Hole TO-247-3

IGBT Transistors NGTG35N65FL2WG

Datasheet NGTG35N65FL2WG (PDF)

Price (check the terms and price with the managers)
Available: 7 psc.
MOQPrice
3.37 € 
NGTG35N65FL2WG
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