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NGTB50N60S1WG

Manufacturer: ON Semiconductor
REK ID: 80840
4.90 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 100A 
Current - Collector Pulsed (Icm) 200A 
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A 
Power - Max 417W 
Switching Energy 1.5mJ (on), 460µJ (off) 
Input Type Standard 
Gate Charge 220nC 
Td (on/off) @ 25°C 100ns/237ns 
Test Condition 400V, 50A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 94ns 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247-3 

Description

IGBT 50A 600V TO-247 - IGBT Trench 600V 100A 417W Through Hole TO-247-3

IGBT Transistors NGTB50N60S1WG

Datasheet NGTB50N60S1WG (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
MOQPrice
4.90 € 
NGTB50N60S1WG
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