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NGTB50N120FL2WG

Manufacturer: ON Semiconductor
REK ID: 80060
10.47 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 100A 
Current - Collector Pulsed (Icm) 200A 
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A 
Power - Max 535W 
Switching Energy 4.4mJ (on), 1.4mJ (off) 
Input Type Standard 
Gate Charge 311nC 
Td (on/off) @ 25°C 118ns/282ns 
Test Condition 600V, 50A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 256ns 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 

Description

IGBT 1200V 100A 535W TO247 - IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247

IGBT Transistors NGTB50N120FL2WG

Datasheet NGTB50N120FL2WG (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
MOQPrice
10.47 € 
10 9.45 € 
100 7.82 € 
500 6.81 € 
NGTB50N120FL2WG
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