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NGTB30N65IHL2WG

Manufacturer: ON Semiconductor
REK ID: 80721
3.54 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 650V 
Current - Collector (Ic) (Max) 60A 
Current - Collector Pulsed (Icm) 120A 
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A 
Power - Max 300W 
Switching Energy 200µJ (off) 
Input Type Standard 
Gate Charge 135nC 
Td (on/off) @ 25°C -/145ns 
Test Condition 400V, 30A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 430ns 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247-3 

Description

IGBT 600V 70A 300W TO247 - IGBT Trench Field Stop 650V 60A 300W Through Hole TO-247-3

IGBT Transistors NGTB30N65IHL2WG

Datasheet NGTB30N65IHL2WG (PDF)

Price (check the terms and price with the managers)
Available: 11 psc.
MOQPrice
3.54 € 
NGTB30N65IHL2WG
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