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NGTB30N60L2WG

Manufacturer: ON Semiconductor
REK ID: 80749
3.78 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 600V 
Current - Collector (Ic) (Max) 100A 
Current - Collector Pulsed (Icm) 60A 
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 30A 
Power - Max 225W 
Switching Energy 310µJ (on), 1.14mJ (off) 
Input Type Standard 
Gate Charge 166nC 
Td (on/off) @ 25°C 100ns/390ns 
Test Condition 300V, 30A, 30 Ohm, 15V 
Reverse Recovery Time (trr) 70ns 
Operating Temperature 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247-3 

Description

IGBT 600V 30A TO247 - IGBT 600V 100A 225W Through Hole TO-247-3

IGBT Transistors NGTB30N60L2WG

Datasheet NGTB30N60L2WG (PDF)

Price (check the terms and price with the managers)
Available: 2 psc.
MOQPrice
3.78 € 
NGTB30N60L2WG
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