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NGTB30N120L2WG

Manufacturer: ON Semiconductor
REK ID: 81075
8.48 €

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Active 
IGBT Type Trench Field Stop 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 60A 
Current - Collector Pulsed (Icm) 120A 
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 
Power - Max 534W 
Switching Energy 4.4mJ (on), 1.4mJ (off) 
Input Type Standard 
Gate Charge 310nC 
Td (on/off) @ 25°C 116ns/285ns 
Test Condition 600V, 30A, 10 Ohm, 15V 
Reverse Recovery Time (trr) 450ns 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package TO-247 

Description

IGBT 1200V 60A 534W TO247 - IGBT Trench Field Stop 1200V 60A 534W Through Hole TO-247

IGBT Transistors NGTB30N120L2WG

Datasheet NGTB30N120L2WG (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
MOQPrice
8.48 € 
NGTB30N120L2WG
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