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NDT01N60T1G

Manufacturer: ON Semiconductor
REK ID: 135585

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.7V @ 50µA 
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V 
FET Feature 
Power Dissipation (Max) 2.5W (Tc) 
Rds On (Max) @ Id, Vgs 8.5 Ohm @ 200mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-223 (TO-261) 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 600V 0.4A SOT223 - N-Channel 600V 400mA (Tc) 2.5W (Tc) Surface Mount SOT-223 (TO-261)

Transistors NDT01N60T1G

Datasheet NDT01N60T1G (PDF)

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NDT01N60T1G
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