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NDPL180N10BG

Manufacturer: ON Semiconductor
REK ID: 135416

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 180A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V 
Vgs(th) (Max) @ Id 4V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 50V 
FET Feature 
Power Dissipation (Max) 2.1W (Ta), 200W (Tc) 
Rds On (Max) @ Id, Vgs 3 mOhm @ 15V, 50A 
Operating Temperature 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220-3 
Package / Case TO-220-3 

Description

MOSFET N-CH 180A 100V TO220-3 - N-Channel 100V 180A (Ta) 2.1W (Ta), 200W (Tc) Through Hole TO-220-3

Transistors NDPL180N10BG

Datasheet NDPL180N10BG (PDF)

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NDPL180N10BG
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