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MTD6N15T4GV

Manufacturer: ON Semiconductor
REK ID: 132004

Technical Information

Manufacturer ON Semiconductor 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 150V 
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4.5V @ 1mA 
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.25W (Ta), 20W (Tc) 
Rds On (Max) @ Id, Vgs 300 mOhm @ 3A, 10V 
Operating Temperature -65°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package DPAK 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 150V 5A DPAK - N-Channel 150V 6A (Tc) 1.25W (Ta), 20W (Tc) Surface Mount DPAK

Transistors MTD6N15T4GV

Datasheet MTD6N15T4GV (PDF)

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MTD6N15T4GV
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