| Manufacturer | IXYS |
| Series | CoolMOS™ |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 790µA |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Package / Case | i4-Pac™-5 |
MOSFET N-CH 600V 15A I4-PAC - N-Channel 600V 15A (Tc) Through Hole ISOPLUS i4-PAC™
Transistors MKE11R600DCGFC
The manager will inform you of the total cost including delivery.