Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/555 |
Packaging | Bulk |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 800mW (Tc) |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 3.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-205AF (TO-39) |
Package / Case | TO-205AF Metal Can |
MOSFET N-CH - N-Channel 200V 3.5A (Tc) 800mW (Tc) Through Hole TO-205AF (TO-39)
Transistors JANTXV2N6790
The manager will inform you of the total cost including delivery.