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JANTX2N6766T1

Manufacturer: Microsemi Corporation
REK ID: 134574

Technical Information

Manufacturer Microsemi Corporation 
Series Military, MIL-PRF-19500/543 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 200V 
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 4W (Ta), 150W (Tc) 
Rds On (Max) @ Id, Vgs 90 mOhm @ 30A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-254AA 
Package / Case TO-254-3, TO-254AA (Straight Leads) 

Description

MOSFET N-CH TO-254AA - N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-254AA

Transistors JANTX2N6766T1

Datasheet JANTX2N6766T1 (PDF)

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