| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/557 |
| Packaging | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.51nC @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 195 mOhm @ 8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Package / Case | 18-CLCC |
MOSFET N-CH 18-LCC - N-Channel 100V 8A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49)
Transistors JAN2N6796U
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