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IXTF1N400

Manufacturer: IXYS
REK ID: 132022

Technical Information

Manufacturer IXYS 
Series 
Packaging Tube  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 4000V 
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 25V 
FET Feature 
Power Dissipation (Max) 160W (Tc) 
Rds On (Max) @ Id, Vgs 60 Ohm @ 500mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package ISOPLUS i4-PAC™ 
Package / Case i4-Pac™-5 (3 leads) 

Description

MOSFET N-CH 4000V 1A ISOPLUS I4 - N-Channel 4000V 1A (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™

Transistors IXTF1N400

Datasheet IXTF1N400 (PDF)

Price (check the terms and price with the managers)
Available: 5 psc.
Price available upon request
IXTF1N400
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