| Manufacturer | IXYS |
| Series | HiPerFET™ |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 |
| Package / Case | TO-247-3 |
MOSFET N-CH 800V 20A PLUS247-3 - N-Channel 800V 20A (Tc) 360W (Tc) Through Hole PLUS247™-3
Transistors IXFX20N80Q
The manager will inform you of the total cost including delivery.