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IXFJ40N30Q

Manufacturer: IXYS
REK ID: 136108

Technical Information

Manufacturer IXYS 
Series HiPerFET™ 
Part Status Last Time Buy 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 300V 
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 4mA 
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V 
FET Feature 
Power Dissipation (Max) 300W (Tc) 
Rds On (Max) @ Id, Vgs 80 mOhm @ 20A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-268 
Package / Case TO-220-3, Short Tab 

Description

MOSFET N-CHANNEL 300V 40A TO268 - N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-268

Transistors IXFJ40N30Q

Datasheet IXFJ40N30Q (PDF)

Price (check the terms and price with the managers)
Available: 10 psc.
Price available upon request
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