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IXFH14N100Q

Manufacturer: IXYS
REK ID: 136099

Technical Information

Manufacturer IXYS 
Series HiPerFET™ 
Packaging Tube  
Part Status Last Time Buy 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 1000V 
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 5V @ 4mA 
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V 
FET Feature 
Power Dissipation (Max) 360W (Tc) 
Rds On (Max) @ Id, Vgs 750 mOhm @ 7A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-247AD (IXFH) 
Package / Case TO-247-3 

Description

MOSFET N-CH 1000V 14A TO247AD - N-Channel 1000V 14A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Transistors IXFH14N100Q

Price (check the terms and price with the managers)
Available: 6 psc.
Price available upon request
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The manager will inform you of the total cost including delivery.