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IXFC24N50Q

Manufacturer: IXYS
REK ID: 136088

Technical Information

Manufacturer IXYS 
Series HiPerFET™ 
Packaging Tube  
Part Status Last Time Buy 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 500V 
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 4mA 
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V 
FET Feature 
Power Dissipation (Max) 230W (Tc) 
Rds On (Max) @ Id, Vgs 230 mOhm @ 10.5A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package ISOPLUS220™ 
Package / Case ISOPLUS220™ 

Description

MOSFET N-CH 500V 21A ISOPLUS220 - N-Channel 500V 21A (Tc) 230W (Tc) Through Hole ISOPLUS220™

Transistors IXFC24N50Q

Datasheet IXFC24N50Q (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
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