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IXBX75N170A

Manufacturer: IXYS
REK ID: 81378
50.75 €

Technical Information

Manufacturer IXYS 
Series BIMOSFET™ 
Packaging Tube  
Part Status Active 
IGBT Type 
Voltage - Collector Emitter Breakdown (Max) 1700V 
Current - Collector (Ic) (Max) 110A 
Current - Collector Pulsed (Icm) 300A 
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A 
Power - Max 1040W 
Switching Energy 3.8mJ (off) 
Input Type Standard 
Gate Charge 358nC 
Td (on/off) @ 25°C 26ns/418ns 
Test Condition 1360V, 42A, 1 Ohm, 15V 
Reverse Recovery Time (trr) 360ns 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Package / Case TO-247-3 
Supplier Device Package PLUS247™-3 
Base Part Number IXB*75N170 

Description

IGBT 1700V 110A 1040W PLUS247 - IGBT 1700V 110A 1040W Through Hole PLUS247™-3

IGBT Transistors IXBX75N170A

Datasheet IXBX75N170A (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
MOQPrice
50.75 € 
IXBX75N170A
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