| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CH 25V 81A IPAK - N-Channel 25V 81A (Tc) 63W (Tc) Through Hole I-Pak
Transistors IRLU8256PBF
The manager will inform you of the total cost including delivery.