| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 6.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(SOT23-6) |
| Package / Case | SOT-23-6 |
MOSFET N-CH 20V 6.5A 6TSOP - N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micro6™(SOT23-6)
Transistors IRLMS2002GTRPBF
The manager will inform you of the total cost including delivery.