Manufacturer | Infineon Technologies |
Series | HEXFET®, StrongIRFET™ |
Packaging | Digi-Reel® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 211A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 158nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 8292pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 63W (Tc) |
Rds On (Max) @ Id, Vgs | 0.75 mOhm @ 50A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MD |
Package / Case | DirectFET™ Isometric MD |
MOSFET N-CH 20V 211A DIRECTFET - N-Channel 20V 38A (Ta), 211A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount DIRECTFET™ MD
Transistors IRL6283MTRPBF
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