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IRG7CH30K10EF

Manufacturer: Infineon Technologies
REK ID: 80467
1.47 €

Technical Information

Manufacturer Infineon Technologies 
Series 
Part Status Active 
IGBT Type Trench 
Voltage - Collector Emitter Breakdown (Max) 1200V 
Current - Collector (Ic) (Max) 10A 
Vce(on) (Max) @ Vge, Ic 2.56V @ 15V, 10A 
Switching Energy 
Input Type Standard 
Gate Charge 4.8nC 
Td (on/off) @ 25°C 10ns/90ns 
Test Condition 600V, 10A, 22 Ohm, 15V 
Operating Temperature -40°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Package / Case Die 
Supplier Device Package Die 

Description

IGBT CHIP WAFER - IGBT Trench 1200V 10A Surface Mount Die

IGBT Transistors IRG7CH30K10EF

Datasheet IRG7CH30K10EF (PDF)

Price (check the terms and price with the managers)
Available: 7 psc.
MOQPrice
1.47 € 
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